SK hynix Takes Lead in AI-Specific Memory Race with HBM4 Completion

Strategic Insights -

Chipmaker SK hynix has completed the development of high-bandwidth memory 4 (HBM4), a next-generation memory for artificial intelligence (AI) accelerators, and is now ready for mass production. This marks a milestone in the semiconductor industry, and SK hynix is poised to maintain a competitive position in the market. The company's HBM4 has the industry's best data processing speed and power efficiency, with bandwidth doubled and a 40% improvement in power efficiency over the previous generation. This is expected to enhance AI service performance by up to 69% in data centers.

Key Takeaways:

  • SK hynix is the first chipmaker to complete mass production of HBM4, a next-generation memory for AI accelerators.
  • HBM4 has the industry's best data processing speed and power efficiency, with bandwidth doubled and a 40% improvement in power efficiency over the previous generation.
  • The chip's 10 gigabit-per-second (Gbps) operation speed outperforms the international standard for HBM4 of 8 Gbps, while securing reliability and stability in production by applying advanced mass reflow molded underfill (MR-MUF) process and the 1b nanometer process.
  • HBM4 is expected to be adopted in Nvidia's next-generation GPU (graphics processing unit) architecture, Rubin, and will be available for mass production soon.
  • SK hynix is ensuring stability by applying the advanced MR-MUF and 1b process used in its HBM3E, while Samsung is seeking to catch up with the 1c process.
  • Meritz Securities analyst Kim Sun-woo estimates that SK hynix will secure an approximately 60% market share in 2026, buoyed by its early lead in HBM4.
  • SK hynix previously dominated the supply of HBM3 and HBM3E for Nvidia's AI accelerators, and its HBM4 completion marks a significant step in cementing its status as the world's most influential memory chipmaker.

Statistics:

  • 60% market share estimate for SK hynix in 2026 (Meritz Securities analyst Kim Sun-woo)
  • 40% improvement in power efficiency over the previous generation
  • 69% enhancement in AI service performance in data centers
  • 1,024 I/O terminals in HBM3, doubled to 2,048 in HBM4
  • 8 Gbps international standard for HBM4, outperformed by HBM4's 10 Gbps operation speed
  • 1b nanometer process used in HBM4 production, with 1c process used by Samsung

Sources:

  • SK hynix press release, "SK hynix Completes Development of High-Bandwidth Memory 4 (HBM4)"
  • SK hynix website, "HBM4"
  • Meritz Securities analyst Kim Sun-woo, cited in article "SK hynix set to secure 60% of HBM4 market share in 2026"