Novel Semiconductor Structure with Enhanced Performance

Strategic Insights -

A team of inventors has developed a novel semiconductor structure featuring a multi-layered source/drain structure, providing improved performance and reliability for electronic devices. The invention, patented by Shih-Chieh Chang and colleagues, was published on October 14, 2025, with patent number 12446255.

The new structure comprises a gate structure formed over a fin structure, with a gate spacer layer and a source/drain (S/D) epitaxial layer. The S/D epitaxial layer includes a first and second layer, with a step height between their top surfaces. The gate spacer layer is formed over the top surface of the S/D epitaxial layer, and a dielectric spacer layer is formed on the S/D epitaxial layer.

The inventors' summary highlights the advantages of the new structure, including improved current flow and reduced leakage. The claims describe various embodiments of the semiconductor structure, including different fin structures, gate spacer layers, and dielectric spacer layers.

Key Takeaways:

  • The novel semiconductor structure features a multi-layered source/drain structure, providing improved performance and reliability.
  • The structure includes a gate structure formed over a fin structure, with a gate spacer layer and a source/drain epitaxial layer.
  • The S/D epitaxial layer comprises a first and second layer, with a step height between their top surfaces.
  • The gate spacer layer is formed over the top surface of the S/D epitaxial layer, and a dielectric spacer layer is formed on the S/D epitaxial layer.
  • The structure provides improved current flow and reduced leakage.
  • The claims describe various embodiments of the semiconductor structure, including different fin structures, gate spacer layers, and dielectric spacer layers.
  • The inventors' summary highlights the advantages of the new structure, including improved performance and reliability.

Statistics:

  • Patent number: 12446255
  • Date of filing: April 17, 2024
  • Date of publication: October 14, 2025
  • Number of claims: 16
  • Number of embodiments: 13

Sources:

  • Chang, Shih-Chieh. Semiconductor structure with source/drain multi-layer structure and method for forming the same. U.S. Patent Number 12446255, filed April 17, 2024, and published online on October 14, 2025. Patent URL (for desktop use only): https://ppubs.uspto.gov/pubwebapp/external.html?q=(12446255)&db=USPAT&type=ids