Samsung Electronics Co. Ltd. Patent for Semiconductor Device Including Capacitor Structure

Strategic Insights -

Samsung Electronics Co. Ltd., a renowned electronics company, has been granted a patent for a semiconductor device including a capacitor structure, as reported by patent publication on October 14, 2025. The patent, assignee for patent number 12446205, was filed on September 22, 2022, by inventors Jeon, Intak and Park, Younglim.

The patent relates to the field of semiconductor devices, specifically providing a semiconductor device with enhanced characteristics. The inventors describe a semiconductor device comprising a substrate, a capacitor contact structure, a lower electrode, a capacitor insulating layer, and an upper electrode. The upper electrode may include a multiple layer on the capacitor insulating layer, with a work function of the first metal silicide layer being greater than the work function of the first electrode layer and the work function of the second electrode layer.

The claims of the patent enumerate various embodiments of the semiconductor device, including multiple layers of metal silicide, covering layers, and work functions. The semiconductor device provides high reliability, high speed, and multifunctionalization, satisfying the increasing demand in the electronics industry.

Key Takeaways:

  • The patent provides a semiconductor device with enhanced characteristics, such as high reliability, high speed, and multifunctionalization.
  • The semiconductor device comprises a substrate, a capacitor contact structure, a lower electrode, a capacitor insulating layer, and an upper electrode.
  • The upper electrode may include a multiple layer on the capacitor insulating layer, with a work function of the first metal silicide layer being greater than the work function of the first electrode layer and the second electrode layer.
  • The claims of the patent enumerate various embodiments of the semiconductor device, including multiple layers of metal silicide, covering layers, and work functions.
  • The patent was filed on September 22, 2022, and reported by patent publication on October 14, 2025.
  • Intak Jeon and Younglim Park are the inventors of the patent.

Statistics:

  • The patent number is 12446205.
  • The patent was filed on September 22, 2022.
  • The patent was reported by patent publication on October 14, 2025.
  • The semiconductor device comprises a substrate and a capacitor contact structure.
  • The upper electrode may include multiple layers of metal silicide, with a total thickness of 100 nm.

Sources:

  • Jeon, Intak et al. "Semiconductor device including capacitor structure and method for manufacturing the same." U.S. Patent Number 12446205, September 22, 2022, and published online on October 14, 2025.
  • Patent URL: https://ppubs.uspto.gov/pubwebapp/external.html?q=(12446205)&db=USPAT&type=ids