Electronics industry
Patent Application Seeks to Reduce Floating Body Effect in N-Type MOSFET Devices
Researchers from the US have proposed a novel solution to reduce the floating body effect (FBE) in N-type metal-oxide-semiconductor field-effect transistors (MOSFETs). The invented technology aims to mitigate the FBE, which can lead to increased current consumption and device degradation. The patent application, filed on April 10, 2024, describes an