GLOBALFOUNDRIES U.S. Inc. Receives Patent for Capacitor Integrated with Memory Element

Strategic Insights -

GLOBALFOUNDRIES U.S. Inc., a leading semiconductor manufacturer, has received patent number 12432936 for its innovative technology that integrates a capacitor with a memory element in a memory cell. According to the patent, the inventors, Venkatesh P. Gopinath, Gregory A. Northrop, Bipul C. Paul, and Joseph Versaggi, filed the application on June 23, 2022, and the patent was published online on September 30, 2025. This breakthrough technology has the potential to revolutionize the field of random-access memory (RAM) and semiconductor structures.

Key Takeaways:

  • The patented technology integrates a capacitor with a memory element in a memory cell, enabling the creation of more efficient and compact memory devices.
  • The inventors have designed a structure that comprises at least one memory cell with a memory element and a capacitor connected by a top conductor material.
  • The capacitor is sized differently than the memory element, allowing for more precise control over the electrical properties of the device.
  • The patented technology can be used to improve the performance and reliability of random-access memory (RAM) devices.
  • The invention has applications in areas such as artificial intelligence, machine learning, and data storage.
  • The structure can be fabricated using techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
  • The patented technology demonstrates a novel approach to integrating capacitors and memory elements in a single device.

Statistics:

  • 1E15 reads: The expected number of reads that a RRAM cell can handle before changing state (at 500 mV and 100 ns stress time).
  • 500 mV: The voltage at which the RRAM cell is stressed to determine its lifetime.
  • 100 ns: The time under stress required to determine the lifetime of the RRAM cell.
  • June 23, 2022: The date on which the patent application was filed.
  • September 30, 2025: The date on which the patent was published online.
  • 12432936: The patent number awarded to GLOBALFOUNDRIES U.S. Inc.

Sources:

  • Gopinath, Venkatesh P. Capacitor integrated with memory element of memory cell. U.S. Patent Number 12432936, filed June 23, 2022, and published online on September 30, 2025.
  • GLOBALFOUNDRIES U.S. Inc. (Malta, New York, United States)
  • VerticalNews editors