Graphene Nanoribbons and Carbon Nanotubes May Revolutionize Semiconductor Industry

Strategic Insights -

Researchers from International Business Machines Corporation (IBM) have developed a method to fabricate semiconductor structures using graphene nanoribbons and carbon nanotubes. These structures have the potential to improve the performance and miniaturization of electronic devices, according to a patent filed on October 28, 2013, and published on July 28, 2015.

The inventors, Guy M. Cohen, Christos D. Dimitrakopoulos, and Alfred Grill, have developed a method to create graphene nanoribbons and carbon nanotubes from silicon carbide (SiC) fins or nanowires. This approach allows for the formation of high-quality nanoribbons and nanotubes with controlled structure and orientation. The graphene nanoribbons have a bandgap that can be tailored by adjusting the width of the nanoribbons, which is crucial for fabricating electronic devices.

The proposed semiconductor structures include parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions. This layout enables the integration of high-density devices while maintaining good short-channel characteristics. The disclosed structures can be fabricated using SiC fins or nanowires as templates, allowing for the creation of thin-channel devices with double-gate structures.

The inventors highlight the importance of graphene nanoribbons and carbon nanotubes in achieving FET scaling requirements. The use of these materials allows for the thinning of the SOI body, which is necessary for maintaining good short-channel characteristics. Additionally, the gate-all-around devices enable further scaling, pushing the limits of current technology.

The described semiconductor structures have the potential to replace traditional silicon-based devices, offering improved performance and reduced power consumption. The ability to fabricate high-quality graphene nanoribbons and carbon nanotubes from SiC templates is a significant step forward in the development of emerging technologies based on nanomaterials.

Key Takeaways:

  • IBM researchers have developed a method to fabricate semiconductor structures using graphene nanoribbons and carbon nanotubes.
  • The proposed structures have parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions.
  • The use of silicon carbide (SiC) fins or nanowires as templates enables the creation of high-quality nanoribbons and nanotubes.
  • Graphene nanoribbons have a bandgap that can be tailored by adjusting the width of the nanoribbons.
  • Double-gate structures are essential for achieving good short-channel characteristics.
  • The disclosed semiconductor structures can be fabricated using standard CMOS technology.

Statistics:

  • The graphene nanoribbons have a measured mobility of electrons that is much higher than for InP or silicon.
  • The bandgap of graphene nanoribbons increases with decreasing width of the nanoribbons.
  • The width of the graphene nanoribbons (GNR) has to be less than 10 nm for potential practical application.
  • The achievable integration density of the proposed structures is equivalent to that obtained in state-of-the-art silicon technology.
  • The gate structure overlaps a portion of each graphene nanoribbon and is located atop a portion of the SiC fin.

Sources:

  • Cohen, Guy M.; Dimitrakopoulos, Christos D.; Grill, Alfred. Graphene Nanoribbons and Carbon Nanotubes Fabricated from SiC Fins Or Nanowire Templates. U.S. Patent Number 9093507, filed October 28, 2013, and published online on July 28, 2015. Patent URL: