IBM Assigned Patent for Double Gate Depletion Mode MOSFET

Strategic Insights -

IBM has been assigned a patent for a "double gate depletion mode MOSFET" developed by four co-inventors. The abstract of the patent describes a metal-oxide-semiconductor field effect transistor (MOSFET) with a unique body layer and electrode configuration that enables a double gate configuration and tight control of the channel. The patent application was filed on January 11, 2008, and the patent was assigned on March 11. The invention aims to provide a high voltage operation and low off-current in a compact volume.

Key Takeaways:

  • The patent, developed by four co-inventors, is for a double gate depletion mode MOSFET that features a unique body layer and electrode configuration.
  • The MOSFET has a body layer that follows the contour of exposed surfaces of a semiconductor substrate and contains a bottom surface of a shallow trench and adjoined sidewalls.
  • The invention provides a double gate configuration and tight control of the channel to enable a complete pinch-off of the channel and a low off-current in a compact volume.
  • The patent application was filed on January 11, 2008, as (11/972,811).
  • The co-inventors named in the patent are John B. Campi Jr., Richard A. Phelps, Robert M. Rassel, and Michael J. Zierak.
  • The patent abstract states that the MOSFET can provide a high voltage operation and low off-current in a compact volume.

Statistics:

  • Patent number: 7,902,606
  • Date of patent assignment: March 11
  • Date of patent application filing: January 11, 2008
  • Patent application number: 11/972,811

Sources:

  • U.S. Patent and Trademark Office
  • http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=188&f=G&l=50&d=PTXT&s1=20110308.PD.&s2=%28NY.ASST.%29&co1=AND&p=4&OS=ISD/03/08/2011+AND+AS/NY&RS=ISD/03/08/2011+AND+AS/NY