IBM Receives Patent for Field Effect Transistor

Strategic Insights -

International Business Machines Corporation (IBM) has been issued a patent for a field effect transistor, according to a news report by VerticalNews. The patent, number 9041109, was filed on September 19, 2013, and published online on May 26, 2015. The inventors of the patent are Anirban Basu, Pouya Hashemi, and Ali Khakifirooz. The disclosure relates to a semiconductor structure, specifically a field effect transistor including an epitaxially grown channel and a method of manufacturing the same.

Key Takeaways:

  • The patent describes a field effect transistor with an epitaxially grown channel, providing an abrupt junction for a compound semiconductor material channel.
  • The transistor manufacturing method involves forming a doped semiconductor material region over a crystalline insulator layer, followed by the removal of a disposable gate structure and planarization dielectric layer.
  • The transistor includes a source region, drain region, and a channel region, where the channel region is epitaxially grown from the top surface of the crystalline insulator layer.
  • The patent provides a semiconductor structure with at least one source region, one drain region, and a planar channel region, where the channel region includes a single crystalline semiconductor material epitaxially aligned to a crystallographic structure of the single crystalline insulator layer.
  • The transistor further includes a gate dielectric and a gate electrode vertically spaced from the planar channel region by the gate dielectric.
  • The patent also describes a method of forming a semiconductor structure, where the process involves forming a disposable gate structure over a semiconductor material portion, removing the disposable gate structure, and growing a planar channel region from the top surface of the single crystalline insulator layer.

Statistics:

  • The patent was filed on September 19, 2013.
  • The patent was published online on May 26, 2015.
  • The inventors of the patent are Anirban Basu, Pouya Hashemi, and Ali Khakifirooz.
  • The patent number is 9041109.

Sources:

  • Basu, Anirban; Hashemi, Pouya; Khakifirooz, Ali. Field Effect Transistor Including a Recessed and Regrown Channel. U.S. Patent Number 9041109, filed September 19, 2013, and published online on May 26, 2015. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9041109.PN.&OS=PN/9041109RS=PN/9041109