IBM Receives Patent for Integrated Circuit Design

Strategic Insights -

In a groundbreaking achievement, the United States Patent and Trademark Office granted patent no. 8,994,085 to International Business Machines Corporation (IBM) on March 31, 2015. The patent, titled "Integrated circuit including DRAM and SRAM/logic," marks a significant milestone in the field of integrated circuit design. The invention, credited to a team of skilled engineers led by Veeraraghavan S. Basker, aims to improve the performance and efficiency of integrated circuits by integrating DRAM (Dynamic Random Access Memory) and SRAM/logic (Static Random Access Memory) into a single chip.

Key Takeaways:

  • The patented invention, designed by IBM, features an integrated circuit with an N+ type layer, a buffer layer, and a P type region, which work together to create a highly efficient and powerful chip.
  • The circuit includes a trench capacitor with a plate electrode formed by the N+ type layer, as well as a first contact and a second contact that connect to the N+ type layer and the P type region, respectively.
  • The integrated circuit also features a first logic RAM FET formed in the silicon layer above the P type region, which functions as a P-type back gate.
  • The patent was filed on July 18, 2012, with application number 13/551,714.
  • The invention is assigned to International Business Machines Corporation (IBM) of Armonk, NY.
  • The team of inventors includes Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz, Pranita Kulkarni, Tenko Yamashita, and Chun-Chen Yeh.
  • The patent was granted to IBM on March 31, 2015.

Statistics:

  • June 2015: 8,994,085 is granted as IBM's patent number.
  • 2012: Patent application filed on July 18, with application number 13/551,714.
  • March 31, 2015: Patent granted to IBM.

Sources:

  • United States Patent and Trademark Office
  • International Business Machines Corporation (IBM)
  • U.S. Patent & Trademark Office Abstract