IBM Receives Patent for Radiation-Hardened Transistors Based on Graphene and Carbon Nanotubes

Strategic Insights -

Scientists at International Business Machines Corporation (IBM) have made significant breakthroughs in developing radiation-hardened transistors based on graphene and carbon nanotubes. On June 23, 2015, the United States Patent and Trademark Office granted patent number 9,064,776 to IBM for their innovative invention. The patent, titled "Radiation hardened transistors based on graphene and carbon nanotubes," showcases IBM's efforts to create reliable and durable electronic devices for extreme environments.

The invention presents a method of fabricating radiation-hard transistors using a carbon-based material, such as graphene and carbon nanotubes. The process involves providing a radiation-hard substrate, forming the carbon-based material on the substrate, and creating source and drain regions of the transistor. The gate dielectric and top-gate contact are then formed to complete the transistor device.

Key Takeaways:

  • The invention provides a method of fabricating radiation-hard transistors using graphene and carbon nanotubes, offering improved reliability and durability for extreme environments.
  • The patent was granted on June 23, 2015, to International Business Machines Corporation (IBM) for their innovative technique.
  • The invention includes a method of forming a radiation-hard transistor with a carbon-based material serving as the channel region, source, and drain regions of the transistor.
  • The patent filing date is August 14, 2013, with application number 13/966,385.
  • The invention involves providing a radiation-hard substrate, forming the carbon-based material on the substrate, and creating source and drain regions of the transistor.
  • The gate dielectric and top-gate contact are formed to complete the transistor device.
  • The invention is significant for its potential applications in extreme environments, such as space exploration and high-energy physics.
  • The use of graphene and carbon nanotubes provides improved performance and reliability over traditional semiconductor materials.
  • The patent showcases IBM's commitment to advancing technology and innovation in the field of electronics.

Statistics:

  • Patent number: 9,064,776
  • Grant date: June 23, 2015
  • Application number: 13/966,385
  • Filing date: August 14, 2013
  • Inventors: Yu-Ming Lin and Jeng-Bang Yau
  • Assignee: International Business Machines Corporation (IBM)
  • Corresponding address: Armonk, NY, USA

Sources:

  • United States Patent and Trademark Office
  • IBM press release