Microwave ECR Plasma Assisted MOCVD of Yttrium Oxide Thin Films: A Groundbreaking Achievement

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Researchers at the Institute of Chemical Technology in Maharashtra, India, have successfully deposited high-quality yttrium oxide (Y2O3) thin films using a microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process. The team, led by S. Barve, utilized an indigenously developed metal organic precursor, Yttrium 2,7,7-trimethyl-3,5-octanedionates (Y(tod)(3)), which was synthesized using an ultrasound method. The deposited coatings were characterized using various techniques, including X-ray photoelectron spectroscopy, glancing angle X-ray diffraction, infrared spectroscopy, stylus profilometry, spectroscopic ellipsometry, and nanoindentation.

Key Takeaways:

  • The researchers used a microwave ECR CVD process to deposit Y2O3 thin films, which is a groundbreaking achievement in the field of nanotechnology.
  • The deposited coatings were characterized using a range of techniques, including X-ray photoelectron spectroscopy, glancing angle X-ray diffraction, and infrared spectroscopy.
  • The team found that maintaining an optimum oxygen activity is essential for depositing single-phase cubic yttrium oxide films.
  • This study is the first to describe the use of Y(tod)(3) precursor for deposition of Y2O3 films using plasma assisted CVD process.
  • The researchers concluded that the microwave ECR plasma assisted MOCVD process is a promising technique for depositing high-quality Y2O3 thin films.
  • S. Barve and colleagues published their study in the journal Plasma Processes and Polymers, highlighting the potential of this technique for nanotechnology applications.

Statistics:

  • Oxygen flow rate varied from 1-9 sccm during MOCVD process.
  • The study reported the measurement of thickness and roughness of the films using stylus profilometry.
  • The researchers measured the hardness and elastic modulus of the films using nanoindentation technique.
  • The study concluded that maintaining an optimum oxygen activity is essential for depositing single-phase cubic yttrium oxide films.

Sources:

  • S. Barve, et al. "Microwave ECR Plasma Assisted MOCVD of Y2O3 Thin Films Using Y(tod)(3) Precursor and Their Characterization. Plasma Processes and Polymers, 2011;8(8):740-749
  • Institute of Chemical Technology
  • Plasma Processes and Polymers
  • Nanotechnology Weekly via VerticalNews.com
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