Nanowire Capacitor for Bidirectional Operation Patent Issued

Strategic Insights -

Researchers at International Business Machines Corporation have made a groundbreaking discovery in the field of nanotechnology, with the patent issuance of a nanowire capacitor for bidirectional operation. This innovation has the potential to revolutionize the way capacitors are designed and used in complementary metal-oxide semiconductor (CMOS) technology.

The patent, filed on January 28, 2013, and published online on June 23, 2015, describes a method of fabricating an electronic device that includes a nanowire capacitor and a field effect transistor (FET) device. The capacitor device has a channel region that is undoped, while the FET device has doped source and drain regions. The silicide on the capacitor device extends at least to the edge of the gate stack, allowing for efficient energy storage and power decoupling.

This technology has significant implications for the development of future electronic devices, particularly those that require high-performance and low-power consumption. The use of nanowires as capacitors has been shown to improve capacitance, reduce leakage current, and increase device speed. Furthermore, the bidirectional operation of the capacitor enables it to serve both as a power supply and a load, making it an attractive solution for various applications.

Key Takeaways:

  • The patent issuance of a nanowire capacitor for bidirectional operation represents a significant breakthrough in nanotechnology.
  • The capacitor device has a channel region that is undoped, while the FET device has doped source and drain regions.
  • The silicide on the capacitor device extends at least to the edge of the gate stack, allowing for efficient energy storage and power decoupling.
  • This technology has significant implications for the development of future electronic devices, particularly those that require high-performance and low-power consumption.
  • The use of nanowires as capacitors has been shown to improve capacitance, reduce leakage current, and increase device speed.
  • The bidirectional operation of the capacitor enables it to serve both as a power supply and a load, making it an attractive solution for various applications.
  • The inventors of this technology are Sarunya Bangsaruntip, Amlan Majumdar, and Jeffrey W. Sleight, who are affiliated with International Business Machines Corporation.
  • The patent is assigned to International Business Machines Corporation and has the patent number 9064942.

Statistics:

  • The patent was filed on January 28, 2013.
  • The patent was published online on June 23, 2015.
  • The patent has the number 9064942.
  • The capacitor device has a channel region that is undoped.
  • The FET device has doped source and drain regions.
  • The silicide on the capacitor device extends at least to the edge of the gate stack.

Sources:

  • Bangsaruntip, Sarunya; Majumdar, Amlan; Sleight, Jeffrey W.. Nanowire Capacitor for Bidirectional Operation. U.S. Patent Number 9064942, filed January 28, 2013, and published online on June 23, 2015. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9064942.PN.&OS=PN/9064942RS=PN/9064942