Novel Magnetic Circuit Complementary Structure Enhances Variable Flux Memory Machines

Strategic Insights -

Researchers at the Chinese Academy of Sciences have proposed a novel magnetic circuit complementary structure (MCC-VFMM) to enhance the flux adjustment (FA) range and on-load demagnetization resistance (ODR) capabilities of hybrid-magnetic-circuit variable flux memory machines (HMC-VFMMs). The proposed MCC-VFMM features two different parallel magnetic circuit structures and a dual-layer permanent magnet (PM) structure to achieve a wide operating range and high efficiency.

According to the research, existing HMC-VFMMs suffer from narrow FA ranges, which hinder their potential for efficiency improvements in the high-speed region. The MCC-VFMM is designed to address this limitation by employing an ingeniously complementary layout of the dual-layer PM structure, which forms series magnetic circuits with fine ODR capability. The research team has also developed simplified equivalent magnetic circuit models to determine the enhanced FA capability of the proposed MCC-VFMM.

Key Takeaways:

  • The proposed MCC-VFMM features two different parallel magnetic circuit structures and a dual-layer PM structure to enhance the FA range and ODR capabilities.
  • The structural evolution and operating principle of the MCC-VFMM are introduced individually, and the simplified equivalent magnetic circuit models are developed to determine the enhanced FA capability.
  • A comprehensive comparison of the electromagnetic performance of the HMC- and MCC-VFMMs is investigated using the finite element method.
  • An MCC-VFMM prototype is tested, confirming the feasibility of the above analysis.
  • The research has been peer-reviewed and funded by the National Natural Science Foundation of China, China Postdoctoral Innovation Talent Support Program, Natural Science Foundation of Zhejiang Province, Ningbo Science and Technology Innovation 2025 Major Special Project, and Natural Science Foundation of Ningbo.
  • Jinhua Chen, a researcher at the Chinese Academy of Sciences, is the corresponding author.

Statistics:

  • The research proposes a new magnetic circuit complementary structure to enhance the FA range and ODR capabilities of HMC-VFMMs.
  • The proposed MCC-VFMM features two different parallel magnetic circuit structures and a dual-layer PM structure.
  • The research has been funded by five organizations, including the National Natural Science Foundation of China.
  • The MCC-VFMM prototype is tested to confirm the feasibility of the above analysis.
  • The research has been peer-reviewed.

Sources:

  • [Source 1] A Novel Variable Flux Memory Machine With Magnetic Circuit Complementary Structure, IEEE-ASME Transactions on Mechatronics, 2025.
  • [Source 2] Jinhua Chen, Jie Zhou, Wei Liu, Chi Zhang, Shuheng Qiu, Ya Li, and Hui Yang, A Novel Variable Flux Memory Machine With Magnetic Circuit Complementary Structure, IEEE-ASME Transactions on Mechatronics, 2025.
  • [Source 3] NewsRx, Studies from Chinese Academy of Sciences Have Provided New Information about Technology (A Novel Variable Flux Memory Machine With Magnetic Circuit Complementary Structure), Journal of Engineering, October 20, 2025; p 3866.