Patent Application for Fin Capacitor Employing Sidewall Image Transfer

The United States Patent and Trademark Office has received an application for a US patent titled "FIN CAPACITOR EMPLOYING SIDEWALL IMAGE TRANSFER" from International Business Machines Corporation. The application, with number 20150145008, was published on May 28, 2015. The inventors behind this innovation are Cheng; Kangguo; Divakaruni; Ramachandra; Ponoth; Shom S.; Standaert; Theodorus E.; and Yamashita; Tenko. The assignee for this patent is International Business Machines Corporation, with its headquarters in Armonk, NY.

Key Takeaways:

• The patent application describes a novel method for creating a fin capacitor, which is a crucial component in modern electronic devices.
• The process involves using a sidewall image transfer process to pattern an upper portion of a doped semiconductor material portion into an array of doped semiconductor fins.
• The semiconductor fins function as the lower electrode of the fin capacitor, while a conductive hole-containing structure serves as the upper electrode.
• The application details the formation of gate-level mandrel structures to straddle multiple semiconductor fins and the creation of a contact-level dielectric layer.
• The inventors, including Cheng, Divakaruni, Ponoth, Standaert, and Yamashita, have collectively contributed to the development of this innovative fin capacitor design.

Statistics:

• The patent application number is 20150145008.
• The publication date is May 28, 2015.
• The inventors behind this innovation are Cheng; Kangguo; (Schenectady, NY); Divakaruni; Ramachandra; (Ossining, NY); Ponoth; Shom S.; (Gaithersburg, MD); Standaert; Theodorus E.; (Clifton Park, NY); and Yamashita; Tenko; (Schenectady, NY).
• The assignee for this patent is International Business Machines Corporation, with its headquarters in Armonk, NY.

Sources:

• "FIN CAPACITOR EMPLOYING SIDEWALL IMAGE TRANSFER" patent application, United States Patent and Trademark Office, published May 28, 2015.