Patent Filed for Semiconductor Manufacturing Method with Improved Epitaxial Layer Quality

Strategic Insights -

A team of inventors, led by Gao, Qiang, has developed a semiconductor manufacturing method that improves the quality of epitaxial layers, which are critical components in modern electronics. The method involves forming a silicon germanium epitaxial layer, followed by a pure silicon layer and a second silicon layer doped with boron atoms. This innovation aims to address the issues of germanium atom agglomeration and migration, which can lead to surface unevenness and reduced device yield.

Key Takeaways:

  • The patent application describes a method for forming an epitaxial layer with better quality, specifically targeting the issues of germanium atom agglomeration and migration.
  • The method involves forming a pure silicon layer on top of the silicon germanium epitaxial layer to prevent germanium atom migration and agglomeration.
  • The second silicon layer, doped with boron atoms, is formed on top of the pure silicon layer to achieve better thermal stability and reduced surface unevenness.
  • The claimed embodiments of the invention include specific parameters for the formation of the epitaxial layer, such as the thickness of the pure silicon layer (5-30 angstroms) and the concentrations of germanium and boron atoms in the respective layers.
  • The semiconductor manufacturing method can be applied to various semiconductor devices, including transistors and integrated circuits.
  • The invention addresses the needs of the modern electronics industry for improved epitaxial layer quality and reduced device yield.

Statistics:

  • The patent application was filed on August 16, 2022, and published online on September 30, 2025 (U.S. Patent Number 12432997).
  • The claimed semiconductor manufacturing method involves a series of precise temperature controls, with formation temperatures ranging from 600° C. to 800° C.
  • The thickness of the pure silicon layer is between 5 and 30 angstroms.
  • The concentration of boron atoms in the second silicon layer is between 1E20 cm-3 and 1E22 cm-3.
  • The average weight percentage concentration of germanium atoms in the silicon germanium epitaxial layer can be higher than 40%.

Sources:

  • Gao, Qiang. Method for forming an epitaxial layer with better quality. U.S. Patent Number 12432997, filed August 16, 2022, and published online on September 30, 2025. Patent URL: https://ppubs.uspto.gov/pubwebapp/external.html?q=(12432997)&db=USPAT&type=ids