Process for Production of Silicon Carbide Single Crystal

Strategic Insights -

A Japanese patent application has been published, revealing a method for growing silicon carbide (SiC) single crystals. Sumitomo Electric Industries, a leading Japanese technology conglomerate, has filed the application, which describes a process for producing SiC single crystals using a novel approach. The method involves creating a sealant layer on the substrate to prevent contamination and ensure high-quality crystal growth.

Key Takeaways:

  • The patent application proposes a process for producing SiC single crystals with enhanced quality and purity.
  • The method involves creating a gap between two single-crystalline SiC substrates, which are then sealed with a sublimated material to prevent contamination.
  • The sealing part is removed, and the SiC single crystals are grown on the front surfaces of the substrates.
  • The inventors, Taro Nishiguchi, Shin Harada, and Makoto Sasaki, have filed the patent application under PCT/JP2011/054307.
  • The process offers improved crystal growth rates and reduced defects in the resulting SiC crystals.
  • The application highlights the importance of sealing the gap between the substrates to prevent contamination and ensure high-quality crystal growth.
  • The inventors suggest that this method is suitable for producing high-quality SiC crystals for various applications, including electronics and aerospace.

Statistics:

  • The patent application was filed on February 25, 2011, under Application No. PCT/JP2011/054307.
  • The application was published on December 22, as Publication No. WO/2011/158532.
  • The inventors, Taro Nishiguchi, Shin Harada, and Makoto Sasaki, are employed by Sumitomo Electric Industries, Ltd.
  • The company has a long history of innovation in the field of silicon carbide technology.
  • SiC single crystals are widely used in various applications, including electronics, aerospace, and renewable energy systems.
  • The proposed method offers improved crystal growth rates and reduced defects in the resulting SiC crystals.

Sources:

  • World Intellectual Property Organization (WIPO), Publication No. WO/2011/158532, "PROCESS FOR PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SUBSTRATE"
  • WIPO, Application No. PCT/JP2011/054307, February 25, 2011