Samsung Electronics Co., Ltd. Receives Patent for Input Buffer and Memory Device

Strategic Insights -

Samsung Electronics Co., Ltd. has been issued a patent for its input buffer and memory device design, which aims to improve the performance of memory devices by preventing a decrease in signal amplitude caused by feedback circuits. This innovative design includes a first buffer, a feedback circuit, and a second buffer circuit, which work together to amplify and buffer signals. The feedback circuit includes a feedback resistor and a feedback inverter, which are connected to the output node of the first buffer and the output node of the second buffer circuit, respectively. This design allows for adjustable resistance and logic threshold voltage, enabling the input buffer to increase performance and prevent signal degradation.

Key Takeaways:

  • The patented design includes a first buffer, a feedback circuit, and a second buffer circuit, which work together to amplify and buffer signals.
  • The feedback circuit includes a feedback resistor and a feedback inverter, which are connected to the output node of the first buffer and the output node of the second buffer circuit, respectively.
  • The feedback resistor may include a variable resistor with adjustable resistance, allowing for flexibility in signal amplification.
  • The feedback inverter may include a plurality of P-MOS transistors, N-MOS transistors, and transistor switches, which can be controlled independently to adjust the logic threshold voltage.
  • The design allows for adjustable logic threshold voltage, enabling the input buffer to increase performance and prevent signal degradation.
  • The patent includes a circuit for a semiconductor device that includes a first buffer, a second buffer, a resistor, and a third buffer, which work together to amplify and buffer signals.
  • The patent provides a memory device with an input buffer and a memory cell array, which can store data corresponding to the buffer output signal.

Statistics:

  • The patent was filed on March 11, 2015.
  • The patent was published online on December 15, 2015.
  • The patent number is 9214202.
  • The inventors of the patent are Shim, Yong, Bae, Seung-Jun, and Yun, Won-Joo.

Sources:

  • Shim, Yong; Bae, Seung-Jun; Yun, Won-Joo. Input Buffer and Memory Device Including the Same. U.S. Patent Number 9214202, filed March 11, 2015, and published online on December 15, 2015.
  • Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9214202.PN.&OS=PN/9214202RS=PN/9214202