Samsung Granted Patent for Magnetic Memory Devices

Strategic Insights -

Samsung Electronics Co., Ltd. has been granted a significant patent, no. 8,345,474, by the United States Patent and Trademark Office for its innovative magnetic memory device design. This breakthrough technology, titled "Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness," is set to revolutionize the field of data storage and processing. The patent, filed on April 28, 2010, demonstrates the company's commitment to pushing the boundaries of innovation.

Key Takeaways:

  • The patented magnetic memory device features a unique structure with a tunnel barrier, a reference layer, and a free layer, each comprising multiple magnetic and nonmagnetic layers.
  • The device's free layer includes a first magnetic layer, a nonmagnetic layer, and a second magnetic layer, with the nonmagnetic layer sandwiched between the first and second magnetic layers.
  • The patented design aims to control the product of saturated magnetization and thickness of the magnetic layers to enhance data storage and processing capabilities.
  • The patent is assigned to Samsung Electronics Co., Ltd. and Korea University Research and Business Foundation.
  • The inventor team, led by Sechung Oh, includes Kyung Jin Lee, Jangeun Lee, and Hong Ju Suh, all experts in magnetic memory device design.
  • The patent filing number is 12/769,287, and the patent was granted on January 1, 2013.

Statistics:

  • Patent number: 8,345,474
  • Filing date: April 28, 2010
  • Grant date: January 1, 2013
  • Number of inventors: 4
  • Assignees: Samsung Electronics Co., Ltd. and Korea University Research and Business Foundation

Sources:

  • U.S. Patent & Trademark Office: Patent Number 8,345,474, actively cited in the abstract section
  • U.S. Patent & Trademark Office: Application Number 12/769,287, cited in the original patent filing information