Electronic components
A team of researchers led by Nan Wu, inventor and engineer at GlobalFoundries U.S. Inc., has made a groundbreaking discovery in the field of semiconductor technology. Filed on September 19, 2022, and published online on October 14, 2025, patent number 12446253 discloses a novel field effect transistor (FET) with
Electronics industry
A patent application has been filed by inventor Ahmed, Faizan, for a portable temperature-controlled enclosure featuring a front-loaded aluminum payload chamber designed for efficient storage and easy access. The device utilizes a semiconductor chip mounted at an optimized angular orientation to create a radial cooling pattern, ensuring precise temperature control
Electronics industry
A new study published in Frontiers in Education has explored the impact of video-game music on students' learning process and outcome in Electone pedagogy. The research, conducted by a team of educators from Rajamangala University of Technology Krungthep, involved 50 students and 2 Electone teachers. The study used a
Electronics industry
A thermal conduction sheet holder and a method of manufacturing a heat dissipating device have been disclosed in a patent filed by inventors Mika Kobune, Keita Suga, and Michiaki Yajima. The patent, titled "Thermal conduction sheet holder and method of manufacturing heat dissipating device," was filed on October
Electronics industry
Researchers from the US have proposed a novel solution to reduce the floating body effect (FBE) in N-type metal-oxide-semiconductor field-effect transistors (MOSFETs). The invented technology aims to mitigate the FBE, which can lead to increased current consumption and device degradation. The patent application, filed on April 10, 2024, describes an
Electronics industry
Researchers from the US have proposed a novel solution to reduce the floating body effect (FBE) in N-type metal-oxide-semiconductor field-effect transistors (MOSFETs). The invented technology aims to mitigate the FBE, which can lead to increased current consumption and device degradation. The patent application, filed on April 10, 2024, describes an
Electronics industry
New research from the University of Orleans has made a groundbreaking discovery in the field of photocatalytics. By immobilizing semiconductor carbon nitride (C3N4) in the interlayer spacing of a nickel-zinc-aluminum hydrotalcite-like compound (LDH), the researchers achieved improved photocatalytic performance for the degradation of methylparaben in solution. This study, funded by
Electronics industry
Researchers at Samsung Electronics Co. Ltd. have been issued patent number 12444450, a memory device and method for managing dynamic voltage frequency scaling operations based on host configuration. Chul-Hwan Choo, Doo Hee Hwang, and Jun Ha Hwang are the inventors listed on the patent, which was filed on July 25,
Electronics industry
Samsung Electronics Co. Ltd., a leading South Korean conglomerate, has filed a patent application for a groundbreaking panel-level glass based embedded silicon bridge package and its manufacturing method. As the electronics industry continues to shrink devices and increase power consumption, this innovation seeks to address the growing need for high-reliability,
Electronics industry
New research from the University of Orleans has made a groundbreaking discovery in the field of photocatalytics. By immobilizing semiconductor carbon nitride (C3N4) in the interlayer spacing of a nickel-zinc-aluminum hydrotalcite-like compound (LDH), the researchers achieved improved photocatalytic performance for the degradation of methylparaben in solution. This study, funded by
Electronics industry
A team of researchers from National Tsing-Hua University has made significant progress in the development of pressure conductive rubber (PCR) with enhanced high-frequency performance, crucial for semiconductor testing interfaces. The study focuses on synthesizing core shell onion-like carbon-nickel (CNi) particles using a hydrothermal process, optimizing six key parameters to improve
Electronics industry
Research conducted by Kwok-Ho Wong and Mansun Chan at the Hong Kong University of Science and Technology has shed light on the contact issue for two-dimensional (2D) material-based field-effect transistors (FETs) at cryogenic temperatures. Despite achieving ohmic behavior at room temperature, the drain current of 2DFETs exhibits a shift from
