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Electronics industry

Samsung Electronics Co. Ltd. Receives Patent for Memory Device and Method for Managing Dynamic Voltage Frequency Scaling Operations

Strategic Insights

— 2 min read

Researchers at Samsung Electronics Co. Ltd. have been issued patent number 12444450, a memory device and method for managing dynamic voltage frequency scaling operations based on host configuration. Chul-Hwan Choo, Doo Hee Hwang, and Jun Ha Hwang are the inventors listed on the patent, which was filed on July 25, 2022 and published online on October 14, 2025. The memory device is designed to receive a mode register write command from a host device, determine a level of a voltage corresponding to the mode, and transmit the voltage value to the host device. The method also includes reading the mode register to determine whether a dynamic voltage frequency scaling core (DVFSC) operation is used and storing the determined level of the voltage used for the DVFSC operation in the mode register.

Key Takeaways:

  • The patent describes a memory device that includes a memory cell array for storing data, a mode register, and a table associated with operation modes of the memory device and operating voltages corresponding to the operation modes.
  • The memory device is configured to receive a mode register write command from a host device, including information indicating at least one of the operation modes, and write the determined level of the operating voltage into the mode register.
  • The memory device reads the mode register to determine whether a dynamic voltage frequency scaling core (DVFSC) operation is used, and the information indicates whether read data bus inversion (RDBI) is used, a ratio of a first clock signal related to a command provided from the host device to a second clock signal related to data provided from the host device, or a number of DQ ports used for exchanging data with the host device.
  • The system comprises a memory device and a host device, and the memory device is configured to receive a mode register write command including information indicating the at least one operation mode of the memory device and write the determined level of the operating voltage into the mode register.
  • The method of operating a memory device comprises receiving a mode register write command, determining a level of a voltage of the at least one operation mode based on the information in the mode register, and transmitting the voltage value in the mode register to the external host device.

Statistics:

  • The patent number is 12444450.
  • The filing date is July 25, 2022.
  • The publication date is October 14, 2025.
  • The inventors are Chul-Hwan Choo, Doo Hee Hwang, and Jun Ha Hwang.
  • The memory device is designed to operate in a low voltage band.

Sources:

  • Choo, Chul-Hwan. Memory device and method for managing dynamic voltage frequency scaling operations based on host configuration. U.S. Patent Number 12444450, filed July 25, 2022, and published online on October 14, 2025. Patent URL (for desktop use only): https://ppubs.uspto.gov/pubwebapp/external.html?q=(12444450)&db=USPAT&type=ids

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