Field effect transistors

Breakthrough in Neuromorphic Computing: Researchers Develop Reconfigurable Bimodal Ferroelectric Synapse

Palaiseau, France-based researchers have made a significant leap in the field of neuromorphic computing, discovering a reconfigurable bimodal ferroelectric synapse that enhances the functionality and scalability of van der Waals (vdW) ferroelectric field-effect transistors. The novel synapse, developed by a team from the University of Paris Saclay, boasts precise electrical

Electronics industry

Breakthrough in Semiconductor Technology: GlobalFoundries Unveils Patent for Field Effect Transistor with Adjustable Effective Gate Length

A team of researchers led by Nan Wu, inventor and engineer at GlobalFoundries U.S. Inc., has made a groundbreaking discovery in the field of semiconductor technology. Filed on September 19, 2022, and published online on October 14, 2025, patent number 12446253 discloses a novel field effect transistor (FET) with

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Breakthrough in 2D Material-Based Field-Effect Transistors at Cryogenic Temperatures

Research conducted by Kwok-Ho Wong and Mansun Chan at the Hong Kong University of Science and Technology has shed light on the contact issue for two-dimensional (2D) material-based field-effect transistors (FETs) at cryogenic temperatures. Despite achieving ohmic behavior at room temperature, the drain current of 2DFETs exhibits a shift from

Electronic components

Enhancing Gate Control and Mitigating Short Channel Effects in Thin-Film Transistors

Researchers from the University of Texas Austin have made significant breakthroughs in the design of thin-film transistors, which can lead to improved performance and efficiency in semiconductor technologies. By modifying the source and drain electrodes to have tapered tips, known as nanospike electrodes, substantial reductions in short channel effects can

Electronics industry

Patent Application for Hybrid Integrated SRAM Memory Cell Structure and Method of Manufacturing

Researchers YAO, Jiaxin, YIN, Huaxiang, and ZHANG, Xuexiang have submitted a patent application for a hybrid integrated SRAM memory cell structure and a method of manufacturing a hybrid integrated SRAM memory cell structure. The invention aims to improve the performance of SRAM by combining gate-all-around field effect transistors (GAAFETs) and

Electronics industry

Stacked Field Effect Transistors: A New Semiconductor Breakthrough

Researchers at a US-based company have made significant advancements in semiconductor technology, inventing a new type of stacked field effect transistor (FET) that surpasses existing devices in efficiency and compactness. According to the patent application, the innovative design combines two FETs stacked on top of each other, with a multilayered

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Effective Thermal Management in Electronic Devices Using Phase Change Materials

Effective thermal management is crucial for high-power devices to prevent overheating, which can degrade their performance and reliability. However, existing studies often oversimplify the heat source as a constant power region, neglecting the effects of periodic thermal cycling. Researchers from the University of Nottingham, in collaboration with the Ningbo Science

Electronic components

Breakthrough in Simulating Quantum Transport in Nanoscale FETs

Researchers from Technical University Dortmund have made significant progress in simulating the quantum transport in nanoscale multi-gate field-effect transistors (FETs), overcoming the challenges of mode coupling and transient behavior. Despite the complexity of the issue, the team has developed a novel method, coupled mode-space approximation, to accurately model mode coupling

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Patent Application for Hybrid Integrated SRAM Memory Cell Structure and Method of Manufacturing

Electronics industry

Effective Thermal Management in Electronic Devices Using Phase Change Materials

Electronics industry

Stacked Field Effect Transistors: A New Semiconductor Breakthrough

Electronic components