Integrated circuit fabrication
Breakthrough in Semiconductor Etching: New Method for Etching Barium Titanate and Bi-Metal Oxides
Researchers at Albany, NY, have developed a novel etching method for barium titanate and bi-metal oxides, crucial materials in advanced memory device design and fabrication. According to a patent application filed on March 28, 2024, and made available online on October 2, 2025, the new method uses carbon-based ligand gases