Breakthrough in Optoelectronic Semiconductor Component Technology

AMS-OSRAM International GmbH has published a groundbreaking patent describing an innovative optoelectronic semiconductor component that addresses efficiency and area optimization challenges in the field. This remarkable design promises to significantly enhance the performance of optoelectronic devices such as LEDs, lasers, and optical sensors.

The patented technology focuses on improving the area efficiency of optoelectronic semiconductor components by reducing the need for rewiring and vias. This innovation creates an electrically conductive edge layer that extends from one contact point to the other, providing a path for charge carriers without compromising the active zone. The design enables a majority of the generated radiation to exit the semiconductor component on one side, increasing its efficiency.

The patented optoelectronic semiconductor component includes a layer stack comprising a first semiconductor region, a second semiconductor region, and an active zone. It features a first contact means for electrically contacting the first semiconductor region and a second contact means for electrically contacting the second semiconductor region. The second contact means is designed to be radiation-transmissive, and an electrically conductive edge layer is arranged on the layer stack, extending from the second contact means to the first main surface. A first dielectric layer is also present between the edge layer and the layer stack.

The patent application provides a comprehensive explanation of the invention, including multiple claims that cover various aspects of the design. The claims specify the material composition of the edge layer, the method of deposition, and the electrically insulating properties of the first dielectric layer.

Key Takeaways:

• The patented optoelectronic semiconductor component tackles the issue of reduced area efficiency in flip chips by introducing an electrically conductive edge layer.
• The design optimizes the performance of optoelectronic devices by reducing the need for rewiring and vias.
• The electrically conductive edge layer provides a path for charge carriers without compromising the active zone.
• The patented design enables a majority of the generated radiation to exit the semiconductor component on one side, increasing its efficiency.
• The component is free of vias and can be electrically connected from the outside on two opposite sides.
• The method of producing the component involves creating a recess in the semiconductor wafer to form the layer stack.
• The invention includes various embodiments that cover different aspects of the design, such as the material composition of the edge layer and the method of deposition.

Statistics:

• Patent number: 12446382
• Publication date: October 14, 2025
• Filing date: September 8, 2021
• Total claims: 20
• Material composition of edge layer: TCO, metal, semiconductor, graphene, or combinations thereof
• Method of deposition: Exposure to a second main surface, polishing, etching, or laser lift-off process
• Efficiency improvement: A majority of the generated radiation exits the semiconductor component on one side

Sources:

• Patent URL: https://ppubs.uspto.gov/pubwebapp/external.html?q=(12446382)&db=USPAT&type=ids
• Patent title: Optoelectronic semiconductor component and production method
• Patent number: 12446382
• Filing date: September 8, 2021
• Publication date: October 14, 2025