Sign in Subscribe
Electronic components

Breakthrough in Semiconductor Technology: GlobalFoundries Unveils Patent for Field Effect Transistor with Adjustable Effective Gate Length

Strategic Insights

— 2 min read

A team of researchers led by Nan Wu, inventor and engineer at GlobalFoundries U.S. Inc., has made a groundbreaking discovery in the field of semiconductor technology. Filed on September 19, 2022, and published online on October 14, 2025, patent number 12446253 discloses a novel field effect transistor (FET) with an adjustable effective gate length. This innovation has far-reaching implications for the development of faster, more efficient, and smaller integrated circuits.

The patented technology involves a structure comprising an insulator layer on a semiconductor substrate, source/drain regions, and a section of a semiconductor layer extending laterally between the source/drain regions. The structure also includes a primary gate structure and at least one secondary gate structure, which can be biased independently to establish different effective gate lengths. This design allows for the customization of the transistor's performance, enabling it to operate at optimal levels in a variety of applications.

The claims of the patent highlight the potential of this technology, stating that the structure can have an effective gate length equal to the length of the center portion between the end portions, or a combined length of one end portion and the center portion. Additionally, the patent notes that the structure can have different types of conductivity, making it suitable for various semiconductor applications.

Key Takeaways:

  • The patented field effect transistor (FET) has an adjustable effective gate length, allowing for customization of its performance.
  • The structure includes an insulator layer, source/drain regions, and a section of a semiconductor layer extending laterally between the source/drain regions.
  • The primary gate structure and at least one secondary gate structure can be biased independently to establish different effective gate lengths.
  • The invention has the potential to revolutionize the development of integrated circuits by enabling faster, more efficient, and smaller devices.
  • The claims of the patent highlight the versatility and adaptability of the technology.
  • The invention is applicable to various semiconductor applications, including those with different types of conductivity.

Statistics:

  • Patent number: 12446253
  • Date filed: September 19, 2022
  • Date published: October 14, 2025
  • Inventor: Nan Wu, GlobalFoundries U.S. Inc.
  • Assignee: GlobalFoundries U.S. Inc.
  • Related keywords: Business, Electronics, Semiconductor

Sources:

  • Wu, Nan. Field effect transistor with adjustable effective gate length. U.S. Patent Number 12446253, filed September 19, 2022, and published online on October 14, 2025. Patent URL (for desktop use only): https://ppubs.uspto.gov/pubwebapp/external.html?q=(12446253)&db=USPAT&type=ids
  • NewsRx LLC. Breakthrough in Semiconductor Technology: GlobalFoundries Unveils Patent for Field Effect Transistor with Adjustable Effective Gate Length. VerticalNews, 2025.

Read more