Ratcheting Induced Crack Growth in Semiconductor Devices: Novel Research on Thermal Cycling and Material Performance

Research conducted by a team of experts at Harvard University has shed new light on the mechanisms of thermal cycling and its effects on the performance of semiconductor devices. The study, supported by TSMC, aimed to investigate the phenomenon of ratcheting-induced cracking in these devices. The researchers employed the finite element method to simulate a representative structure and observed the effects of cyclic temperature changes on the energy release rate of cracks in brittle materials.

Key Takeaways:

• The study focused on a failure mode caused by cyclic changes in temperature, which can lead to the accumulation of plastic deformation in metals and drive the growth of cracks in nearby brittle materials.
• The researchers found that the energy release rate of the crack in the brittle material increases as the plastic deformation in the metal ratchets, but eventually plateaus after a large number of temperature cycles.
• The study also showed that replacing the metal with a void in the simulation significantly reduces the computational cost for modeling ratcheting-induced cracking.
• The effects of material and geometric parameters on the ratcheting-induced cracking were examined, providing valuable insights for the design of semiconductor devices.
• Zhigang Suo, a researcher at Harvard University, serves as a contact for additional information on this research.
• The study has potential implications for the design and development of semiconductor devices, particularly in the context of thermal cycling and material performance.

Statistics:

• Temperature cycles: The study involved simulating cyclic temperature changes, with the number of cycles not explicitly stated in the source material.
• Energy release rate: The energy release rate of the crack in the brittle material increased during the simulation, but eventually plateaued after a large number of temperature cycles.
• Computational cost: Replacing the metal with a void in the simulation reduced the computational cost for modeling ratcheting-induced cracking by approximately x%.
• Geometric parameter: The effects of material and geometric parameters on ratcheting-induced cracking were examined, but specific details on these parameters are not provided in the source material.

Sources:

• NewsRx. Research Conducted at Harvard University Has Provided New Information about Mechanics (Ratcheting Induced Crack Growth In Semiconductor Devices). Journal of Physics Research. November 4, 2025; p 344.
• Zhigang Suo, et al. Ratcheting Induced Crack Growth In Semiconductor Devices. Extreme Mechanics Letters, 2025;80.
• TSMC. Financial support for research.
• Harvard University. John A Paulson School of Engineering and Applied Sciences, Cambridge, MA 02138, United States.
• Extreme Mechanics Letters. Elsevier, Radarweg 29, 1043 Nx Amsterdam, Netherlands.