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Electronic components

Breakthrough in Magnetic Memory Device Technology

Strategic Insights

— 2 min read

Researchers at Kioxia Corporation have made a significant innovation in magnetic memory device technology, as showcased in a recently published patent. Inventor Tomioka, Kazuhiro, from Yokohama Kanagawa, Japan, has developed a novel structure for magnetic memory devices, enhancing their performance and efficiency. The invention revolves around a stacked structure, including a first magnetic layer, a second magnetic layer, and a nonmagnetic layer, surrounded by sidewall insulating layers containing predetermined elements and oxygen (O).

The magnetic memory device described in the patent is designed to improve the stability and reliability of magnetoresistance effect elements. The device consists of a semiconductor substrate, a bottom electrode, and a stacked structure, which includes a first magnetic layer with a variable magnetization direction, a second magnetic layer with a fixed magnetization direction, and a nonmagnetic layer between the two magnetic layers. The sidewall insulating layers, containing elements such as magnesium (Mg), boron (B), or aluminum (Al), are crucial for the device's functionality.

This patent highlights several key features of the magnetic memory device:

  • The stacked structure allows for a more efficient integration of magnetic memory devices.
  • The use of sidewall insulating layers with specific elements enhances the device's performance.
  • The incorporation of multiple insulating regions with different materials improves the device's stability.

The device's claims and specifications outline the details of the innovation, which paves the way for further advancements in magnetic memory technology.

Key Takeaways:

  • The invention by Tomioka, Kazuhiro, aims to improve the performance and efficiency of magnetic memory devices.
  • The device features a stacked structure, including a first magnetic layer, a second magnetic layer, and a nonmagnetic layer, surrounded by sidewall insulating layers containing predetermined elements and oxygen (O).
  • The incorporation of understated insulating regions, containing elements such as silicon (Si), aids in the device's stability and reliability.
  • The device is designed to enhance the stability and reliability of magnetoresistance effect elements.
  • The patent's claims and specifications outline the details of the innovation, providing a solid foundation for further research.

Statistics:

  • The patent was filed on September 10, 2021, and published online on September 30, 2025.
  • The patent number is 12432930.
  • The inventor's hometown is Yokohama Kanagawa, Japan.
  • The assignee for the patent is Kioxia Corporation.
  • The device consists of a semiconductor substrate, a bottom electrode, and a stacked structure.
  • The stacked structure includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer.
  • The sidewall insulating layers contain elements such as magnesium (Mg), boron (B), or aluminum (Al).
  • The device has 18 claims and specifications.

Sources:

  • Tomioka, Kazuhiro. Magnetic memory device. U.S. Patent Number 12432930, filed September 10, 2021, and published online on September 30, 2025.
  • NewsRx LLC. 2025, Copyright 2025, NewsRx LLC

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