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Breakthrough in Magnetic Memory Devices: Samsung Electronics Unveils Patent

Strategic Insights

— 1 min read

Samsung Electronics Co., Ltd. has made significant advancements in magnetic memory devices with the publication of a patent filed on February 24, 2012. The patent, titled "Magnetic Memory Devices," describes a new reference cell for reading memory cells and provides a method of forming a magnetic memory device. This innovation is expected to satisfy the increasing demands for high integration and low power consumption in the electronic industry.

The background information provided by the inventors, Oh Sechung and Oh Hyungrok, highlights the need for faster write/read operation and lower operation voltage in semiconductor memory devices. Magnetic memory devices, which can operate at high speeds and have non-volatile characteristics, are anticipated to become the next-generation of memory devices. According to the inventors, the magnetic tunnel junction (MTJ) is a key component of magnetic memory devices, and its resistance value varies depending on the magnetization direction of the two magnetic materials.

Key Takeaways:

  • The patent describes a magnetic memory device including at least one memory cell and a reference cell provided on a substrate.
  • The reference cell includes a second base magnetic layer, a reference magnetic layer, and a second tunnel barrier layer between the second base magnetic layer and the reference magnetic layer.
  • The reference magnetic layer has a magnetization direction substantially perpendicular to that of the free layer.
  • The patent provides various examples of embodiments, including those with a non-magnetic metal oxide layer in contact with the reference magnetic layer.
  • The reference cell may be disposed on the at least one memory cell, and a magnetic memory device may include at least one memory cell and at least one reference cell.

Statistics:

  • The patent was filed on February 24, 2012, and published online on January 13, 2015.
  • The patent number is 8934288, and it is assigned to Samsung Electronics Co., Ltd.
  • The patent includes 23 claim statements and 267 drawings.

Sources:

  • Oh, Sechung; Oh, Hyungrok. Magnetic Memory Devices. U.S. Patent Number 8934288, filed February 24, 2012, and published online on January 13, 2015. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8934288.PN.&OS=PN/8934288RS=PN/8934288.

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