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Breakthrough in MEMS Capacitive Pressure Sensor Design

Strategic Insights

— 1 min read

Scientists at Semiconductor Manufacturing International Corporation have invented a revolutionary new device that can detect subtle changes in pressure, opening up vast possibilities for applications in fields like medicine, transportation, and industrial automation. The device, a micro-electromechanical systems (MEMS) capacitive pressure sensor, uses a novel structure that enables it to detect pressure changes with unprecedented accuracy.

Key Takeaways:

  • The MEMS capacitive pressure sensor was patented by Zhongshan Hong of Semiconductor Manufacturing International (Shanghai) Corporation, with patent number 9029212, filed on December 3, 2013, and published online on May 12, 2015.
  • The sensor's design includes a substrate with a first region and a second region, and a first dielectric layer formed on the substrate.
  • The sensor also includes a first electrode layer formed on the first dielectric layer, and a second dielectric layer having a plurality of first openings formed on the first electrode layer.
  • Conductive sidewalls connect the first electrode layer to the second dielectric layer, and a second electrode layer is suspended over the conductive sidewalls.
  • A chamber is formed between the conductive sidewalls and the second electrode layer, and a third dielectric layer exposes a portion of the second electrode layer.
  • The device's unique structure allows for the detection of pressure changes with high accuracy.
  • The inventor's summary states that "one aspect of the present disclosure includes a MEMS capacitive pressure sensor."
  • The method for fabricating the device involves providing a substrate, forming a first dielectric layer, and then forming a first electrode layer and a second dielectric layer.
  • The method also involves etching the second dielectric layer to form a plurality of first openings, and forming conductive sidewalls connecting the first electrode layer to the second dielectric layer.

Statistics:

  • Patent number for the invention: 9029212
  • File date: December 3, 2013
  • Publication date: May 12, 2015
  • Field of application: Electronics, Technology Companies
  • Keywords: Semiconductor Manufacturing International, Semiconductor Integrated Circuits Companies
  • Countries involved: China (Shanghai) Corporation

Sources:

  • Hong, Zhongshan. MEMS Pressure Sensors and Fabrication Method. U.S. Patent Number 9029212, filed December 3, 2013, and published online on May 12, 2015. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9029212.PN.&OS=PN/9029212RS=PN/9029212

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