Sign in Subscribe
World Intellectual Property Organization

Breakthrough in Silicon Carbide Semiconductor Device Production

Strategic Insights

— 1 min read

Researchers at Sumitomo Electric Industries, Ltd. have made a significant advancement in the production of silicon carbide semiconductor devices. According to the World Intellectual Property Organization (WO), the invention (WO/2011/111627) details a process for producing silicon carbide semiconductor devices with excellent electrical properties. The patent, filed on March 4, 2011, under Application No. PCT/JP2011/055093, describes a multi-step process that includes epitaxial layer formation, gate insulating film formation, nitrogen annealing, and post heat treatment. This innovative approach aims to improve the channel mobility of silicon carbide semiconductor devices.

Key Takeaways:

  • The invention involves a silicon carbide semiconductor device with outstanding electrical properties, including high channel mobility.
  • The production process consists of four steps: epitaxial layer formation, gate insulating film formation, nitrogen annealing, and post heat treatment.
  • The heat treatment temperature employed in the post heat treatment step must be higher than the nitrogen annealing temperature and lower than the melting point of the oxide film.
  • The process is designed to improve the electrical properties of silicon carbide semiconductor devices.
  • The patent was filed by Sumitomo Electric Industries, Ltd. under Application No. PCT/JP2011/055093 on March 4, 2011.
  • The invention involves the work of three inventors: Toru Hiyoshi, Takeyoshi Masuda, and Keiji Wada.

Statistics:

  • The heat treatment temperature (T2) employed in the post heat treatment step must be higher than 0°C (the lowest possible temperature) and lower than the melting point of the oxide film.
  • The process involves four distinct steps: epitaxial layer formation, gate insulating film formation, nitrogen annealing, and post heat treatment.
  • The invention was publised on September 15.

Sources:

  • WO/2011/111627, published on September 15
  • WO, World Intellectual Property Organization
  • PCT/JP2011/055093, Application No. (filed on March 4, 2011)

Read more