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IBM Assigned Patent for Device Having Dual Etch Stop Liner and Reformed Silicide Layer

Strategic Insights

— 1 min read

International Business Machines, Armonk, N.Y., has been assigned a patent (7,928,571) developed by four co-inventors for a "device having dual etch stop liner and reformed silicide layer and related methods." The co-inventors are Dureseti Chidambarrao, Weston, Conn., Ying Li, Newburgh, N.Y., Rajeev Malik, Pleasantville, N.Y., and Shreesh Narasimha, Beacon, N.Y. This innovation aims to improve the manufacturing process of semiconductor devices by introducing a reformed silicide layer with enhanced thickness and resistance.

Key Takeaways:

  • The patented device features dual silicon nitride liners and a reformed silicide layer, which improves the thickness and resistance of the silicide layer.
  • The invention provides a method for manufacturing semiconductor devices involving the application of a first silicon nitride liner, removal of a portion, and reforming of the silicide layer, followed by the application of a second silicon nitride liner.
  • The co-inventors aimed to create a semiconductor device that meets specific performance requirements, such as thickness and resistance, through the sequential application and removal of silicon nitride liners.
  • The invention enhances the manufacturability of semiconductor devices by reducing the complexity of the process and ensuring the quality of the final product.
  • The implementation of the method results in improved device performance, increased reliability, and reduced production costs.

Statistics:

  • Patent Number: 7,928,571
  • Co-inventors: 4 (Dureseti Chidambarrao, Ying Li, Rajeev Malik, Shreesh Narasimha)
  • Silicon nitride liners: 2
  • Silicide layers: 2 (one reformed, one not)

*urement of silicon nitride liners: 1

  • Method steps: 4 (application of first liner, removal, reforming, application of second liner)
  • September 6, 2007: Patent application filing date (11/850,968)
  • Publication Date: April 21 (no specific year mentioned, but the patent number suggests it was granted in 2011)

Sources:

  • "U.S. Patent and Trademark Office"

http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=157&f=G&l=50&d=PTXT&s1=20110419.PD.&s2=%28NY.ASST.%29&co1=AND&p=4&OS=ISD/04/19/2011+AND+AS/NY&RS=ISD/04/19/2011+AND+AS/NY

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