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IBM Files Patent for Improved Electromechanical Device

Strategic Insights

— 1 min read

Researchers at International Business Machines Corporation (Armonk, NY) have developed a new electromechanical device that promises improved reliability and performance. According to the patent filed on July 12, 2013, and published online on February 24, 2015, the device utilizes Janus components with a conductive and insulating material to achieve low switching voltage and high endurance. The inventors, Qing Cao, Zhengwen Li, Fei Liu, and Zhen Zhang, have developed a method for fabricating the device, which includes forming a first and second back gate, electrodes, and Janus components in a dielectric layer. The device is expected to reduce standby leakage current and improve sub-threshold behavior compared to traditional transistors.

Key Takeaways:

  • The patent describes a novel electromechanical device that employs Janus components with a conductive and insulating material to achieve low switching voltage and high endurance.
  • The device consists of a first and second back gate, electrodes, and Janus components formed in a dielectric layer.
  • The method for fabricating the device involves forming a first back gate and a second back gate on a first dielectric layer over a substrate, followed by the etch stop layer, electrodes, and Janus components.
  • The device is expected to reduce standby leakage current and improve sub-threshold behavior compared to traditional transistors.
  • The patent was filed on July 12, 2013, and published online on February 24, 2015.
  • The inventors, Qing Cao, Zhengwen Li, Fei Liu, and Zhen Zhang, are affiliated with IBM Research.

Statistics:

  • Patent number: 8962442
  • Filing date: July 12, 2013
  • Publication date: February 24, 2015
  • Number of inventors: 4 (Qing Cao, Zhengwen Li, Fei Liu, and Zhen Zhang)
  • Number of components: 1 (Janus components)
  • Materials used: Conductive and insulating materials
  • Expected benefits: Reduced standby leakage current and improved sub-threshold behavior

Sources:

  • Cao, Qing; Li, Zhengwen; Liu, Fei; Zhang, Zhen. Janus Complementary MEMS Transistors and Circuits. U.S. Patent Number 8962442, filed July 12, 2013, and published online on February 24, 2015. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8962442.PN.&OS=PN/8962442RS=PN/8962442
  • International Business Machines Corporation. Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2015, NewsRx LLC

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