IBM Patents Carbon Nanotube Field-Effect Transistor for Enhanced Electronics

IBM has patented a breakthrough technology in semiconductor electronics, revolutionizing the field of carbon nanotube field-effect transistors. The inventors, Aaron D. Franklin, Joshua T. Smith, and George S. Tulevski, have developed a novel approach to enhancing the performance of carbon nanotube thin films in thin-film transistors (TFTs). The patent, number 9099542, was filed on August 20, 2013, and published online on August 4, 2015.

Key Takeaways:

  • The patent describes a carbon nanotube field-effect transistor that includes a first carbon nanotube film, a first gate layer, and at least one of a source contact and a drain contact.
  • The transistor includes a unique design with a plurality of alternating layers of gate layers and carbon nanotube films, allowing for enhanced electrical coupling and reduced contact resistance.
  • The inventors' summary states that the present invention relates to semiconductor electronics, and more specifically, to carbon nanotube field-effect transistors with improved performance.
  • The technology has the potential to enhance the applicability of carbon nanotube thin films in TFTs, leading to advancements in large area electronics, such as flat panel displays and flexible or transparent electronics.

Statistics:

  • The patent was filed on August 20, 2013, and published online on August 4, 2015.
  • The inventors, Aaron D. Franklin, Joshua T. Smith, and George S. Tulevski, are affiliated with IBM (Armonk, NY).
  • The patent includes a detailed description of the invention, including the transistor design and the benefits of the technology.
  • The research and development of carbon nanotube field-effect transistors have been ongoing since the early 2000s, with various studies exploring their potential applications in electronics.

Sources:

  • Franklin, Aaron D.; Smith, Joshua T.; Tulevski, George S.. Transistors from Vertical Stacking of Carbon Nanotube Thin Films. U.S. Patent Number 9099542, filed August 20, 2013, and published online on August 4, 2015. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9099542.PN.&OS=PN/9099542RS=PN/9099542