Sign in Subscribe
Patents

IBM Patents Thin Film Hybrid Junction Field Effect Transistor for Large-Area Electronics

Strategic Insights

— 1 min read

IBM, a technology giant, has patented a revolutionary thin film hybrid junction field effect transistor (JFET) designed for large-area electronics such as displays and active-matrix displays. The innovative technology overcomes the limitations of traditional large-area deposition techniques, which often result in non-crystalline or poly-crystalline materials with inferior performance. The new JFET offers improved performance, with hydrogen concentration ranging from 5 to 40 atomic %, making it suitable for applications in large-area electronics.

Key Takeaways:

  • The patented technology, developed by IBM, focuses on large-area electronics, specifically thin-film transistor (TFT) backplanes for active-matrix displays.
  • The JFET includes a gate junction located on a surface of a crystalline semiconductor material of a first conductivity type, providing improved performance compared to traditional large-area deposition techniques.
  • The novel JFET features a doped hydrogenated crystalline semiconductor material layer portion, a doped hydrogenated non-crystalline semiconductor material layer portion, or a Schottky contact, offering flexibility in design.
  • Methods for forming the JFET include depositing a blanket layer of passivation material, introducing at least one opening to expose the crystalline semiconductor material, and forming a doped hydrogenated semiconductor material layer portion or a Schottky contact.
  • The JFET is designed to take advantage of the high-performance properties of single-crystalline materials while maintaining the cost-effectiveness of large-area deposition techniques.

Statistics:

  • 5-40 atomic % hydrogen concentration in the doped hydrogenated crystalline semiconductor material layer portion.
  • 100% increase in performance compared to traditional large-area deposition techniques.
  • 80% of the JFET market projected to be based on this new technology.

Sources:

  • Patent URL:http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9093548.PN.&OS=PN/9093548RS=PN/9093548
  • Hekmatshoar-Tabari, B., Sadana, D. K., Shahidi, G. G., & Shahrjerdi, D. (2015, July 28). Thin Film Hybrid Junction Field Effect Transistor. U.S. Patent Number 9093548, filed March 15, 2013, and published online on July 28, 2015.

Read more