Integrated Decoupling Capacitor Patent Application Filed with US Patent and Trademark Office
The United States Patent and Trademark Office has received an application for a patent titled "Integrated Decoupling Capacitor Employing Conductive Through-Substrate Vias" from International Business Machines Corporation. Filed on August 26, 2013, the patent application seeks to register a novel capacitor design that utilizes conductive through-substrate vias as an inner electrode and a columnar doped semiconductor region as an outer electrode. The proposed capacitor is expected to provide a large decoupling capacitance in a small area, without compromising circuit density or Si3D structural design.
Key Takeaways:
- The patent application was filed on August 26, 2013, under application No. 20130344675.
- The inventors of the proposed capacitor are Kim Tae Hong, McAllister Michael F., Shapiro Michael J., and Sprogis Edmund J., all of whom are employed by International Business Machines Corporation.
- The capacitor employs conductive through-substrate vias as an inner electrode and a columnar doped semiconductor region as an outer electrode.
- The proposed design is expected to provide a large decoupling capacitance in a small area, without impacting circuit density or Si3D structural design.
- Additional conductive TSV's can be provided in the semiconductor substrate to enable electrical connection for power supplies and signal transmission.
- The capacitor has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips.
- The patent application was published on December 26, 2013.
Statistics:
- Application No.: 20130344675
- Filing Date: August 26, 2013
- Publication Date: December 26, 2013
- Expected benefits: large decoupling capacitance in a small area, without compromising circuit density or Si3D structural design
Sources:
- United States Patent and Trademark Office
- http://www.uspto.gov/