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Investigating Electrical Conduction Properties of Silicon Nanowires Using Conductive-Probe Atomic Force Microscopy

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— 1 min read

Scientists at the University of Paris, France, have investigated the electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) using conductive-probe atomic force microscopy (AFM). The study aimed to understand the internal microstructures and transport regimes of these nanowires. Researchers synthesized horizontal SiNWs using the in-plane solid-liquid-solid technique and mapped the local current-voltage measurements to reveal a power-law behavior. Vertical phosphorus-doped SiNWs were grown using a gold catalyst-driving vapor-liquid-solid process, and the effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was examined.

Key Takeaways:

  • The researchers used conductive-probe atomic force microscopy (AFM) to investigate the electrical conduction properties of lateral and vertical silicon nanowires (SiNWs).
  • Horizontal SiNWs were synthesized using the in-plane solid-liquid-solid technique and exhibited internal microstructures, which were detected by local current mapping.
  • Local current-voltage measurements on horizontal wires revealed a power-law behavior, indicating several transport regimes based on space-charge limited conduction, which can be assisted by traps in the high-bias regime (1 V).
  • Vertical phosphorus-doped SiNWs were grown using a gold catalyst-driving vapor-liquid-solid process on highly n-type silicon substrates.
  • The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.
  • The study was published in the journal Nanoscale Research Letters in 2011.

Statistics:

  • 1 V: the high-bias regime at which space-charge limited conduction is assisted by traps.
  • Undoped hydrogenated amorphous silicon (a-Si:H): the layer in which the horizontal SiNWs were deployed.
  • 2011: the year the study was published in Nanoscale Research Letters.
  • University of Paris: the institution at which the researchers conducted the study.
  • CNRS UMR 8507: the research unit at the University of Paris Sud where the study was conducted.

Sources:

  • Alvarez, J., et al. (2011). Conductive-probe atomic force microscopy characterization of silicon nanowire. Nanoscale Research Letters, 6(1), 110.
  • Publisher: Springer, 233 Spring St., New York, NY 10013, USA.
  • University of Paris: University of Paris, University of Paris Sud, CNRS UMR 8507, SUPELEC, Laboratory Genie Electrical Paris, 11 Rue Joliot Curie, F-91192 Gif Sur Yvette, FRANCE.

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