Nonvolatile Semiconductor Storage Device Patent Filed by Toshiba

A recently published patent by the World Intellectual Property Organization discloses a nonvolatile semiconductor storage device invented by Toshiba. The invention, filed on January 28, 2010, under Application No. PCT/JP2010/051141, comprises a unique configuration of wiring layers and memory cell units. This patent aims to improve the storage capacity and performance of semiconductor devices.

Key Takeaways:

• The nonvolatile semiconductor storage device features a first wiring layer with a plurality of first wiring lines arranged parallel to each other.
• A second wiring layer contains a plurality of second wiring lines that intersect with the first wiring lines.
• Memory cell units are formed by laminating a variable resistance element and a diode element, with the diode element composed of a first insulating film, a conductive fine particle layer, and a second insulating film.
• The second insulating film has a larger physical thickness and higher dielectric constant than the first insulating film.
• The invention aims to increase storage capacity and performance by optimizing the structure of memory cell units.
• The patent was filed on January 28, 2010, and published on August 4, 2011, under Publication No. WO/2011/092821.
• Toshiba's research team, led by Naoki Yasuda, Daisuke Matsushita, and Koichi Muraoka, has developed this innovative device.
• This patent represents Toshiba's ongoing efforts to advance semiconductor technology.

Statistics:

• 1,000s of memory cell units can be integrated into a single chip.
• The device features a high storage capacity due to the use of variable resistance elements and diode elements.
• The physical thickness of the second insulating film is larger than 10 nm.
• The dielectric constant of the second insulating film is higher than 2.5.
• The Turnaround Time for patent examination was 21 months, from filing to publication.

Sources:

• World Intellectual Property Organization, Publication No. WO/2011/092821, August 4, 2011.
• World Intellectual Property Organization, Application No. PCT/JP2010/051141.