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LEDs

Patent for Improved Light-Emitting Device Published by Epistar Corporation

Strategic Insights

— 1 min read

A patent for an improved light-emitting device has been published online on October 14, 2025, by the inventor Lin, Yung-Hsiang. The patent, filed on April 18, 2022, and assigned to Epistar Corporation, aims to alleviate drawbacks of previous light-emitting devices. The device uses a novel stack structure and semiconductor layers to improve light confining effects.

According to the patent, the light-emitting device includes a substrate, a first semiconductor layer, a second semiconductor layer, an active layer, and a stack structure. The stack structure comprises indium-containing semiconductor layers, which are stacked in sequence and have discontinuous or continuously-grading concentration profiles of indium. The device provides improved light confining effects, reduced defects, and enhanced performance.

The patent also claims various embodiments, including the use of intermediate structures, fourth and fifth indium-containing semiconductor layers, and a third aluminum-containing semiconductor layer with a ridge-shaped portion. Additionally, the device can be designed to reduce stress and improve light emission properties.

Key Takeaways:

  • The patent for the improved light-emitting device was filed on April 18, 2022, and published online on October 14, 2025.
  • The device uses a novel stack structure and semiconductor layers to improve light confining effects.
  • The stack structure comprises indium-containing semiconductor layers with discontinuous or continuously-grading concentration profiles of indium.
  • The device provides improved light confining effects, reduced defects, and enhanced performance.
  • Various embodiments are claimed, including the use of intermediate structures, fourth and fifth indium-containing semiconductor layers, and a third aluminum-containing semiconductor layer with a ridge-shaped portion.
  • The device can be designed to reduce stress and improve light emission properties.

Statistics:

  • The patent was filed on April 18, 2022
  • The patent was published online on October 14, 2025
  • The device uses 4-10 times more indium in the second indium-containing semiconductor layer than in the first and third layers.
  • The first aluminum composition ratio of the first aluminum-containing semiconductor layer is greater than the aluminum composition ratio of the first semiconductor layer.
  • The device has 20 claims, including those related to its improved light confining effects and reduced defects.

Sources:

  • Lin, Yung-Hsiang. Light-emitting device. U.S. Patent Number 12444907, filed April 18, 2022, and published online on October 14, 2025. Patent URL (for desktop use only): https://ppubs.uspto.gov/pubwebapp/external.html?q=(12444907)&db=USPAT&type=ids

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