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Patent for Magnetic Memory Device with Bidirectional Read Scheme Filed with Samsung Electronics Co., Ltd.

Strategic Insights

— 2 min read

Cha, Soo-Ho, a patent inventor from Seoul, South Korea, has filed a patent with Samsung Electronics Co., Ltd. for a magnetic memory device with a bidirectional read scheme. According to the patent's background information, the inventive concept relates to a semiconductor memory device, specifically a magnetic memory device and its read method. The patent aims to address the drawbacks of volatile semiconductor memories such as dynamic random access memories (DRAMs) by utilizing a magnetic random access memory (MRAM) that is nonvolatile, has high-integration, high-speed, and low-power consumption characteristics. The MRAM device uses a magnetic memory cell consisting of an access transistor and a magnetic tunnel junction (MTJ) element, which stores data based on the level of magneto resistance.

Key Takeaways:

  • The patent, filed on August 15, 2013, and published online on February 10, 2015, is assigned to Samsung Electronics Co., Ltd. for patent number 8953368.
  • The inventive concept relates to a semiconductor memory device, specifically a magnetic memory device and its read method, aimed at overcoming the drawbacks of volatile semiconductor memories such as DRAMs.
  • The MRAM device uses a magnetic memory cell consisting of an access transistor and a magnetic tunnel junction (MTJ) element, which stores data based on the level of magneto resistance.
  • The data is read by issuing a series of successive read commands, supplying a read current to the selected magnetic memory element in a first direction and in turn in a second direction under different ones of the read commands, and sensing the magnitude of the read current flowing through the selected magnetic memory element.
  • The patent also describes a magnetic memory device that includes a read command generating unit, a memory cell array, a read circuit, and a control circuit, which is configured to control the direction in which the read current is supplied to the selected magnetic memory element.
  • The bidirectional read scheme allows for the reading of data stored in the magnetic memory element by periodically changing the direction of the read current flowing through the selected magnetic memory element between first and second opposite directions.

Statistics:

  • 1 patent filed with Samsung Electronics Co., Ltd. on August 15, 2013.
  • 1 patent published online on February 10, 2015, with patent number 8953368.
  • 1 magnetic tunnel junction (MTJ) element used in the MRAM device.
  • 1 access transistor used in the MRAM device.

Sources:

  • Cha, Soo-Ho. Magnetic Memory Device Having Bidirectional Read Scheme. U.S. Patent Number 8953368, filed August 15, 2013, and published online on February 10, 2015. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8953368.PN.&OS=PN/8953368RS=PN/8953368

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