Patents

Patents

IBM Develops Novel CMOS Structure with III-V and Silicon-Germanium Transistors

Researchers at International Business Machines Corporation (IBM) have developed a novel CMOS (Complementary Metal-Oxide-Semiconductor) structure that integrates III-V (Indium-Gallium-Arsenide) n-channel field effect transistors and silicon-germanium p-channel field effect transistors on insulator. This innovative design aims to overcome the scaling limitations of traditional silicon-based CMOS technology and achieve higher performance and