Toshiba Granted Patent for High-Performance NAND-Type Nonvolatile Semiconductor Memory Device

Toshiba has been assigned a patent for a high-performance NAND-type nonvolatile semiconductor memory device. The device uses an aluminum oxide film as part of the gate insulating film in a select transistor and as a block insulating film in a memory transistor. This innovation enables a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device, which is essential for various applications, including mobile devices and data centers.

Key Takeaways:

• Toshiba has been assigned a patent (7,999,303) for a high-performance NAND-type nonvolatile semiconductor memory device developed by Shoko Kikuchi, Yasushi Nakasaki, and Koichi Muraoka.
• The device uses an aluminum oxide film as a part of the gate insulating film in a select transistor and as a block insulating film in a memory transistor.
• The patent application was filed on Jan. 14, 2009 (12/353,586).
• The device has a plurality of memory cell transistors connected to each other in series and a select transistor.
• The memory cell transistor includes a first insulating film, a charge trapping layer, a second insulating film made of aluminum oxide, a first control gate electrode, and a first source/drain region.
• The select transistor includes a third insulating film, a fourth insulating film made of an aluminum oxide containing at least one of a tetravalent cationic element, a pentavalent cationic element, and N (nitrogen), a second control gate electrode, and a second source/drain region.
• The device uses an aluminum oxide film, which is a significant improvement over traditional gate insulating films.
• The patent's abstract highlights the device's high-performance capabilities and its suitability for various applications, including mobile devices and data centers.

Statistics:

• Patent number: 7,999,303
• Patent filing date: January 14, 2009
• Patent application number: 12/353,586
• Number of memory cell transistors: Plurality of memory cell transistors connected in series

Sources:

• "Toshiba Granted Patent for High-Performance NAND-Type Nonvolatile Semiconductor Memory Device" (Source: U.S. Patent and Trademark Office)
• Patent Abstract: "The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor and as a block insulating film in a memory transistor." (Source: U.S. Patent and Trademark Office, Patent 7,999,303)
• Patent Filing Information: Patent application number 12/353,586, filed on January 14, 2009 (Source: U.S. Patent and Trademark Office)