Sign in Subscribe
Electronics industry

Breakthrough in Epitaxial Structure and Micro Light Emitting Device Technology

Strategic Insights

— 1 min read

A patent filing by Hsu and Wang has led to the development of an epitaxial structure and micro light emitting device with improved yield, quality, and optoelectronic properties. The invention involves a complex arrangement of quantum well layers, semiconductor layers, and patterned layers, resulting in a device with enhanced reliability and efficiency.

Key Takeaways:

  • The epitaxial structure features a unique combination of quantum well layers, a first type semiconductor layer, and a second type semiconductor layer, allowing for favorable yield and quality.
  • The micro light emitting device includes the epitaxial structure, a first type electrode, and a second type electrode, with the epitaxial structure having an upper surface and a lower surface opposite to each other.
  • The quantum well layer includes at least one patterned layer, which comprises a plurality of geometric patterns, and has a dopant concentration of indium ranging from 4% to 50%.
  • The patterned layer has a ratio of doping concentration of indium to that of the continuous layer ranging from 0.1 to 3.5.
  • The device has good optoelectronic properties and reliability, with the epitaxial structure having stress-adjusted and long-wavelength light emission effects.
  • The device also includes a buffer layer between the lower surface of the quantum well structure and the first type semiconductor layer, which comprises at least one structured layer and has a plurality of geometric structures.
  • The number of geometric patterns is greater than the number of V-shaped defects, with a ratio of defect density to geometric pattern density less than or equal to 0.1.
  • The device has a maximum distance between adjacent geometric patterns of less than or equal to 0.5 mm and a thickness of the second type semiconductor layer greater than or equal to 10 nm and less than 200 nm.

Statistics:

  • Patent number: 12446359
  • Application date: April 29, 2022
  • Publication date: October 14, 2025
  • Inventors: Hsu, Kuang-Yuan and Wang, Shen-Jie
  • Assignee: PlayNitride Display Co. Ltd.
  • Number of claims: 18
  • Keyword: Epitaxial structure and micro light emitting device

Sources:

  • VerticalNews, October 14, 2025.
  • Hsu, Kuang-Yuan. Epitaxial structure and micro light emitting device. U.S. Patent Number 12446359, filed April 29, 2022, and published online on October 14, 2025. Patent URL (for desktop use only): https://ppubs.uspto.gov/pubwebapp/external.html?q=(12446359)&db=USPAT&type=ids

Read more