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Computer memory

Samsung Electronics Co. Ltd. Files Patent for Advanced Magnetic Memory Devices

Strategic Insights

— 2 min read

Samsung Electronics Co. Ltd. has filed a patent for advanced magnetic memory devices, which could potentially emerge as next-generation semiconductor memory devices due to their high-speed and non-volatile characteristics. The patent, filed on August 4, 2022, was published online on October 14, 2025, and is assigned to Samsung Electronics Co. Ltd.

The magnetic memory devices described in the patent involve the use of magnetic tunnel junction (MTJ) patterns, which include two magnetic layers and an insulating layer disposed between them. The resistance value of the MTJ pattern can be changed depending on the magnetization directions of the two magnetic layers. The magnetic memory device can write and read data using the difference between the resistance values of the MTJ pattern.

The inventors claim that their magnetic memory devices can improve resistance characteristics and switching distribution of the MTJ pattern, as well as high-temperature reliability. The devices include a first magnetic pattern and a second magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern, a lower electrode, a blocking pattern, a metal oxide pattern, a buffer pattern, and a seed pattern. Each of these patterns includes a respective non-magnetic metal, and the device also includes an interfacial oxide pattern and an upper electrode.

Key Takeaways:

  • The patent describes advanced magnetic memory devices that use magnetic tunnel junction (MTJ) patterns to write and read data.
  • The devices include a first magnetic pattern and a second magnetic pattern that are sequentially stacked on a substrate, along with several other patterns made of non-magnetic metals.
  • The magnetic memory devices can improve resistance characteristics and switching distribution of the MTJ pattern, as well as high-temperature reliability.
  • The devices include an interfacial oxide pattern and an upper electrode, and use a non-crystalline metal oxide layer between the lower electrode and the first magnetic layer.
  • The inventors claim that their device can improve high-temperature reliability and provide a magnetic memory device capable of improving resistance characteristics and switching distribution of the MTJ pattern.

Statistics:

  • The patent was filed on August 4, 2022, and published online on October 14, 2025.
  • The patent includes 17 claims, which describe the inventors' magnetic memory devices in detail.
  • The devices are made up of a first magnetic pattern and a second magnetic pattern, along with several other layers, including a tunnel barrier pattern, a lower electrode, a blocking pattern, a metal oxide pattern, a buffer pattern, and a seed pattern.
  • The device includes 15 different types of non-magnetic metals, including tantalum (Ta), tungsten (W), niobium (Nb), chromium (Cr), molybdenum (Mo), aluminum (Al), ruthenium (Ru), vanadium (V), and iridium (Ir).

Sources:

  • Hong, Kyungil. Magnetic memory devices. U.S. Patent Number 12446474, filed August 4, 2022, and published online on October 14, 2025.
  • Patent URL (for desktop use only): https://ppubs.uspto.gov/pubwebapp/external.html?q=(12446474)&db=USPAT&type=ids

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