Computer memory
Samsung Electronics Co. Ltd., a leading electronics manufacturer, has received a patent for a vertical non-volatile memory device that improves the integration of memory devices by stacking cell transistors in a vertical direction. The inventive concept, according to the patent, provides a vertical non-volatile memory device that includes a memory
Computer memory
Samsung Electronics Co. Ltd. has filed a patent for advanced magnetic memory devices, which could potentially emerge as next-generation semiconductor memory devices due to their high-speed and non-volatile characteristics. The patent, filed on August 4, 2022, was published online on October 14, 2025, and is assigned to Samsung Electronics Co.
Computer memory
Samsung Electronics Co. Ltd. has received a patent for a semiconductor memory device that includes a wiring structure used as an RC element to improve area efficiency of a chip. The patent, filed on March 16, 2022, and published online on October 14, 2025, relates to semiconductor memory devices and
Computer memory
SK Hynix Inc. has filed a patent application for a semiconductor memory device that utilizes a unique operating method to improve program verification efficiency. The proposed device includes a memory cell array, a peripheral circuit, and a group information storage unit. The control logic of the device sets a target
Electronic components
Samsung Electronics Co. Ltd. has filed a patent for advanced magnetic memory devices, which could potentially emerge as next-generation semiconductor memory devices due to their high-speed and non-volatile characteristics. The patent, filed on August 4, 2022, was published online on October 14, 2025, and is assigned to Samsung Electronics Co.
Electronics industry
Researchers at Samsung Electronics Co. Ltd. have been issued patent number 12444450, a memory device and method for managing dynamic voltage frequency scaling operations based on host configuration. Chul-Hwan Choo, Doo Hee Hwang, and Jun Ha Hwang are the inventors listed on the patent, which was filed on July 25,
Data centers
As artificial intelligence continues to drive innovation and expansion, the data centre ecosystem is shifting towards energy-efficient infrastructure. Memory is becoming increasingly critical to AI performance, and low-power memory solutions are now central to these efforts. Micron Technology has announced the 192GB SOCAMM2 module, designed to enable broader use of
Data centers
As the technology industry continues to experience unprecedented growth in AI innovation, companies are shifting their focus towards sustainable and energy-efficient solutions. Micron Technology, Inc. has announced customer sampling of its SOCAMM2, a 192GB small outline compression attached memory module (SOCAMM2) designed to provide low-power memory solutions for AI data
Computer memory
GLOBALFOUNDRIES U.S. Inc., a leading semiconductor manufacturer, has received patent number 12432936 for its innovative technology that integrates a capacitor with a memory element in a memory cell. According to the patent, the inventors, Venkatesh P. Gopinath, Gregory A. Northrop, Bipul C. Paul, and Joseph Versaggi, filed the application
Electronic components
Samsung Electronics has made significant strides in the field of magnetic memory devices with the development of a novel patent. Filed on November 9, 2022, and published on September 30, 2025, patent 12433171 marks a major advancement in the creation of high-speed and low-voltage memory devices. The patent's
Electronic components
Researchers at Kioxia Corporation have submitted a patent application for a system that enhances the performance of non-volatile memory devices by dynamically adjusting read thresholds based on the number of errors in a page. This approach aims to improve reading data from non-volatile memory devices, which are widely used in
Electronic components
Researchers at Kioxia Corporation have made a significant innovation in magnetic memory device technology, as showcased in a recently published patent. Inventor Tomioka, Kazuhiro, from Yokohama Kanagawa, Japan, has developed a novel structure for magnetic memory devices, enhancing their performance and efficiency. The invention revolves around a stacked structure, including
