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Computer memory

Samsung Electronics Co. Ltd. Receives Patent for Semiconductor Memory Device

Strategic Insights

— 3 min read

Samsung Electronics Co. Ltd. has received a patent for a semiconductor memory device that includes a wiring structure used as an RC element to improve area efficiency of a chip. The patent, filed on March 16, 2022, and published online on October 14, 2025, relates to semiconductor memory devices and provides a method for increasing data storage capacity of a highly integrated nonvolatile memory.

The inventors, Kim, Ah Reum, Kim, Ki Won, and Kim, Sung Hoon, have developed a semiconductor memory device that includes a memory cell array on a substrate, a peripheral circuit element on an upper surface of the substrate, and a wiring structure on the peripheral circuit element. The wiring structure includes a first wiring structure and a second wiring structure, which are spaced apart from each other with an insulating layer interposed therebetween. The first wiring structure is configured to receive a first voltage at one end, a second voltage different from the first voltage at the other end due to resistance, and a third voltage different from the first and second voltages.

According to an example embodiment of the present disclosure, a semiconductor memory device may include a memory cell array on a substrate, a peripheral circuit element, and a wiring structure. The wiring structure includes a first wiring structure and a second wiring structure, which are connected with the peripheral circuit element through a contact vertically extended onto the substrate. The first wiring structure includes a first wiring structure and a second wiring structure, which are spaced apart from each other with an insulating layer interposed therebetween.

Key Takeaways:

  • The patent relates to semiconductor memory devices and provides a method for increasing data storage capacity of a highly integrated nonvolatile memory.
  • The inventors have developed a semiconductor memory device that includes a memory cell array on a substrate, a peripheral circuit element, and a wiring structure.
  • The first wiring structure includes a first wiring structure and a second wiring structure, which are spaced apart from each other with an insulating layer interposed therebetween.
  • The second wiring structure includes a wiring connection portion extended in the second direction, at least a portion of which is on the (1_1)th line, (2_1)th line, and (2_2)th line.
  • At least a portion of the first wiring structure and at least a portion of the second wiring structure are at the same level based on the substrate.
  • The (1_1)th line, (1_2)th line, (2_1)th line, and (2_2)th line are at the same level based on the substrate.
  • The first wiring structure and the second wiring structure are connected with the peripheral circuit element through a contact vertically extended onto the substrate.
  • The first wiring structure includes (1_1)th and (1_2)th lines extended in a first direction and spaced apart from each other in a second direction crossing the first direction.
  • The second wiring structure includes (2_1)th and (2_2)th lines extended in the first direction and spaced apart from each other in the second direction.
  • The (1_1)th line is between the (2_1)th line and the (2_2)th line.
  • The first wiring structure further includes a first wiring connection portion extended in the second direction and electrically connecting the (1_1)th line with the (1_2)th line.
  • The first wiring connection portion is at the same level as the (1_1)th line based on the substrate.
  • The first wiring structure further includes a (1_3)th line at a higher level than the (1_1)th line based on the substrate, and the (1_3)th line is electrically connected with any one of the (1_1)th line and the (1_2)th line through a connection contact.

Statistics:

  • The patent was filed on March 16, 2022.
  • The patent was published online on October 14, 2025.
  • The patent number is 12446225.
  • The patent relates to semiconductor memory devices.
  • The inventors are Kim, Ah Reum, Kim, Ki Won, and Kim, Sung Hoon.
  • Samsung Electronics Co. Ltd. received the patent.

Sources:

  • Patent URL: https://ppubs.uspto.gov/pubwebapp/external.html?q=(12446225)&db=USPAT&type=ids
  • Kim, Ah Reum. Semiconductor memory device. U.S. Patent Number 12446225, filed March 16, 2022, and published online on October 14, 2025.

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